Effective Workfunction Modulation by As Implantation in Metal Gate Stacks | 東京工業大学附属図書館文献データベース

Blank Cover Image

Effective Workfunction Modulation by As Implantation in Metal Gate Stacks

著者名:

R. Singanamalla

さらに 4 件

掲載資料名:

Dielectrics for nanosystems II: materials science, processing, reliability, and manufacturing

シリーズ名:

ECS transactions

シリーズ巻号:

2(1)

発行年:

2006

開始ページ:

49

終了ページ:

62

総ページ数:

14

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

19385862

ISBN:

9781566774383 [1566774381]

言語:

英語

請求記号:

E23400/2-1

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00047106
シリーズID:	PA00000034
会議名:	International Symposium on Dielectrics for Nanosystems ; Meeting of the Electrochemical Society
回次:	2nd ; 209th
会議開催地:	Denver, Colorado. USA
会議開催年:	2004.05.07-2004.05.12

類似資料:

1 国際会議録 Challenges in Integration of Metal Gate High-k Dielectrics Gate Stacks Tsai, W., Ragnarrson, L.-A., Schram, T., DeGendt, S., Heyns, M. Electrochemical Society	7 国際会議録 0.13 μm CMOS Technology with Optimized Poly-Si/No-Oxide Gate Stack Kubicek, S., Jansen, P., Badenes, G., Schaekers, M., Koldyaev, V., Deferm, L., De Meyer, K., Kerr, D., Naem, A. Electrochemical Society
2 国際会議録 13 High-k Gate Stack Engineering - towards Meeting Low Standby Power and High Performance Targets De Gendt, S., Brunco, D., Caymax, M., Canard, T., Date, L., Delabie, A., Deweerd, W., Groeseneken, G., Houssa, M., Hyun, … Electrochemical Society	8 国際会議録 (10.2) 1:45 -2:15 PM - GermaniumDeep-sub micron PMOS Transistors with Etched TaN Metal Gate on a High-K Dielectric, Fabricated in a 200mm Prototyping Line … De Jaeger, M. Meuris B., Kubicek, S., Verheyena, P., Van Steenbergen, J., Lujan, G., Kunnen, E., Sleeckx, E., Teerlinck, … Electrochemical Society
3 国際会議録 Prospect of Hf-Dared Gate Dielectric by PVD with FUSI Gate for LSTP Application M. Niwa, R. Mitsuhashi, S. Hayashi, K. Yamamoto, Y. Harada, M. Kubota, A. Rothchild, T. Hoffmann, S. Kubicek, S. … Electrochemical Society	9 国際会議録 METAL GATES FOR ADVANCED CMOS TECHNOLOGIES KiTTL, J. A. 1, PAWLAK, M. A., LAUWERS, A., SCHRAM, T., POURTOIS, G., VELOSO, A., Yu, H., HOFFMANN, T., DEMEURISSE, C., … Electrochemical Society
4 国際会議録 45. TaN metal gate MOSFETs with aggressively scaled HfO2 dielectrics Lander, R., Schram, T., Lulan, G.S., hooker, J., Vertommen, J., Lee, S., de Weerd, W., Boullart, W., van Elshocht, S, … Electrochemical Society	10 国際会議録 Challenges in Dual Workfunction Metal Gate CMOS Integration B. Lee, S. Song, R. Jammy, M. Hussain Electrochemical Society
5 国際会議録 Investigation on Molybdenum and Its Conductive Oxides as p-type Metal Gate Candidates Z. Li, T. Schram, T. Witters, H. Cho, B. O'Sullivan Electrochemical Society	11 国際会議録 New Theory of Effective Workfunctions at Metal/High-k Dielectric Interfaces - Application to Metal/High-k HfO₂ and La₂O₃ Dielectric Interfaces K. Shiraishi, T. Nakayatna, Y. Akasaka, S. Miyazaki, T. Nakaoka, K. Ohmori, P. Abmet, K. Torii, H. Watanabe, T. Chikyow, … Electrochemical Society
6 国際会議録 27 Materials Issues of Ni Fully Silicided (FUSI) Gates for CMOS Applications Kittl, J. A., Lauwers, A., Pawlak, M. A., Demeurisse, C., Anil, K. G., Veloso, A., van Dal, M. J. H., Schram, T., Brijs, … Electrochemical Society	12 国際会議録 Control of Material Interactions in Advanced High-k Metal Gate Stacks C. Wajda, G. Leusink, K. Akiyama, S. Ashigaki, S. Aoyama, K. Shimomura, M. Aruga, T. Takahashi, K. Yamazaki, H. Yamasaki Electrochemical Society

1

2

3

4

5

6

7

8

9

10

11

12