Modeling and Engineering of Hafnium Silicate (HfSiO) Gate Dielectrics Deposited by Nano-Laminated Atomic-Layer Deposition (NL-ALD) | 東京工業大学附属図書館文献データベース

Blank Cover Image

Modeling and Engineering of Hafnium Silicate (HfSiO) Gate Dielectrics Deposited by Nano-Laminated Atomic-Layer Deposition (NL-ALD)

著者名:

さらに 10 件

掲載資料名:

Atomic layer deposition : at the 208th ECS Meeting, October 16-21, 2005, Los Angeles, California, USA

シリーズ名:

ECS transactions

シリーズ巻号:

1(10)

発行年:

2006

開始ページ:

113

終了ページ:

124

総ページ数:

12

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

19385862

ISBN:

9781566774437 [1566774438]

言語:

英語

請求記号:

E23400/1-10

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00047104
シリーズID:	PA00000034
会議名:	ECS Meeting
回次:	208th
会議開催地:	Los Angeles, California, USA
会議開催年:	2005.10.16-2005.10.21

類似資料:

1 国際会議録 Atomic Layer Deposited Hf₂2 and HfSiO to Enable CMOS Gate Dielectric Scaling, Mobility, and VTH Stability P. Kirsch, M. Quevedo-Lopez, S. Krishnan, S. Song, R. Choi, P. Majhi, Y. Senzaki, G. Bersuker, B. Lee Electrochemical Society	7 国際会議録 Ultra-Thin Zirconium and Hafnium Silicate Films Deposited by MOCVD on Si(100) D. Landheer, X. Wu, H.-W. Chen, M.-S. Lee, S. Moisa, T.-Y. Huang, T.-S. Chao, Z.H. Lu, W. N. Lennard Electrochemical Society
2 国際会議録 Advanced Metal Gate Electrode Options Compatible with ALD and AVD HfSiO x-Based Gate Dielectrics Z. Karim, O. Biossiere, C. Lohe, Z. Zhang, C. Manke, P. Lehnen, P. K. Baumann, J. Dalton, W. Park, S. Ramanathan, J. … Electrochemical Society	8 国際会議録 18 CVD of Hafnium Silicate Thin films for Advanced Gate Applications Sharangpani, R., Muthukrishnan, S., Kher, S., Narwankar, P., Goyani, T., Ma, Y., Ahmed, K., Conti, G. Electrochemical Society
3 国際会議録 44. Poly-Si gate CMOS with hafnium silicate gate dielectric Hobbs, C., Grant, J., Kher, S., Dhandapani, V., Taylor, B., Dip, L., Hegde, R., Metzner, C., Tseng, H., Gilmer, D., … Electrochemical Society	9 国際会議録 Comparison of MOSFET Characteristics Between ALD and MOCVD TiN Metal Gate on Hf Silicate Song, S.C., Lee, B.H., Zhang, Z., Choi, K., Bae, S.H., Alshareef, H., Majhi, P., Wen, H.C., Bennett, J., Sassman, B., … Electrochemical Society
4 国際会議録 Aid HfSiO High-k Dielectric and CVD-TaN Metal Gate Chung, U. I., Park, S. G., Cho, H. -J., Lee, H. L., Park, H. B., Jeon, T. S., Jin, B. J., Kang, S. B., Shin, Y. G., … Electrochemical Society	10 国際会議録 Hafnium Titanium Silicate High-k Dielectric Films Deposited by MOCVD using Novel Single Source Precursors Zuercher, S., Morstein, M., Lemberger, M., Bauer, A. Electrochemical Society
5 国際会議録 (213e) Structural-Dielectric Property Relation From Compositional Tuning of ALD Deposited Yttrium-Stabilized Hafnium Oxide Films Qian Tao Sr., Gregory Jursich, Manish Singh, Christos G. Takoudis American Institute of Chemical Engineers	11 国際会議録 34 Rapid thermal annealing of atomic layer deposited hafnium-silicate/poly-silicon layers Rittersma, Z.M., Massoubre, D., Roozeboorn, F., Verheijen, M.A., van Berkum, J.G.M, Tamminga, Y., Dao, F., Snijders, … Electrochemical Society
6 国際会議録 HfO₂ Gate Dielectrics Deposited via Tetrakis Dlethylamido Hafnium J. Schaeffer, N. V. Edwards, R. Liu, D. Roan, B. Hradsky, R. Gregory, J. Kulik, E. Duda, L. Contreras, J. Christiansen, … Electrochemical Society	12 国際会議録 A Novel Atomic Layer Deposition Process to Deposit Hafnium Silicate Thin Films Senzaki, Y., Park, M., Bartholomew, L., Chatham, H. Electrochemical Society

1

2

3

4

5

6

7

8

9

10

11

12