Asymmetric Distribution of Charge Trap in HfO₂-Based High-k Gate Dielectrics
- 著者名:
K. Higuchi T. Naito A. Uedono K. Shiraishi K. Torii M. Boero T. Chikyow S. Yamosaki K. Yamada R. Hasumuma K. Yamabe - 掲載資料名:
- Physics and technology of high-k gate dielectrics III
- シリーズ名:
- ECS transactions
- シリーズ巻号:
- 1(5)
- 発行年:
- 2006
- 開始ページ:
- 777
- 終了ページ:
- 788
- 総ページ数:
- 12
- 出版情報:
- Pennington, N.J.: Electrochemical Society
- ISSN:
- 19385862
- ISBN:
- 9781566774444 [1566774446]
- 言語:
- 英語
- 請求記号:
- E23400/1-5
- 資料種別:
- 国際会議録
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