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CMOS Integration Issues with High-K/Metal Gate Stack

著者名:
D. Kwong  
掲載資料名:
Physics and technology of high-k gate dielectrics III
シリーズ名:
ECS transactions
シリーズ巻号:
1(5)
発行年:
2006
開始ページ:
653
終了ページ:
662
総ページ数:
10
出版情報:
Pennington, N.J.: Electrochemical Society
ISSN:
19385862
ISBN:
9781566774444 [1566774446]
言語:
英語
請求記号:
E23400/1-5
資料種別:
国際会議録

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