HfSiON Gate Dielectrics for hp45 Node and Beyond

HfSiON Gate Dielectrics for hp45 Node and Beyond

著者名:

掲載資料名:

Physics and technology of high-k gate dielectrics III

シリーズ名:

ECS transactions

シリーズ巻号:

1(5)

発行年:

2006

開始ページ:

645

終了ページ:

652

総ページ数:

8

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

19385862

ISBN:

9781566774444 [1566774446]

言語:

英語

請求記号:

E23400/1-5

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00047099
シリーズID:	PA00000034
会議名:	International Symposium on High Dielectric Constant Materials: Materials Science, Processing, Reliability, and Manufacturing Issues
回次:	3rd
会議開催地:	Los Angeles, California, USA
会議開催年:	2005.10.16-2005.10.21

類似資料:

1 国際会議録 Improvement in NBTI of Metal Gate pMOSFETs with Sub-1nm EOT HfSiON Gate Dielectric by Ar/N₂/H₂(D₂) Plasma Nitridation S. Inumiya, T. Aoyama, Y. Nara Electrochemical Society	7 国際会議録 Extensive Studies for Effects of Nitrogen Incorporation into Hf-Based High-k Gate Dielectrics N. Umezawa, K. Shiraishi, H. Watanabe, K. Toni, Y. Akasaka, S. Inumiya, M. Boero, A. Uedono, S. Miyazaki, T. Ohno, T. … Electrochemical Society
2 国際会議録 High-Mobility and Low-Vth Metal Gate CMOSFETs with Ultra-Thin HfSiON Gate Dielectrics Using TaSiN/TaSix Stacked Electrode and Selective Substrate Fluorine … S. Inumiya, T. Matsuki, T. Aoyama, Y. Nara Electrochemical Society	8 国際会議録 Film Composition and Its Profile Control of HfSiON for Poly-Si Gate CMOSFET with High Performance and Reliability Tsunashima, Y., Sekine, K., Watanabe, T., Inumiya, S., Takayanagi, M., Kaneko, A., Sato, M., Kojima, K., Ishimaru, K., … Electrochemical Society
3 国際会議録 HfSiON Gate Dielectrics for Low-Stand-By Power CMOS Devices Sekine, K., Inumiya, S., Kaneko, A., Sato, M., Hirano, I., Yamaguchi, T., Eguchi, K., Tsunashima, Y. Electrochemical Society	9 国際会議録 Front-End Process Technology for hp65/45 CMOS Devices Y. Nara, F. Ootsuka, K. Nakamura Electrochemical Society
4 国際会議録 Depth Profiling of Chemical and Electronic Structures and Defects of Ultrathin HfSiON on Si(100) S. Miyazaki, A. Ohta, S. Inumiya, Y. Nara, K. Yamada Electrochemical Society	10 国際会議録 Vacancy-Type Defects in MOSFETs with High-κ Gate Dielectrics Probed by Monoenergetic Positron Beams A. Uedono, R. Hasunuma, K. Shiraishi, K. Yamabe, S. Inumiya Electrochemical Society
5 国際会議録 Characterization of Charge Trapping and Dielectric Breakdown of HfAlOx/SiON Dielectric Gate Stack Y. Pei, S. Nagamachi, H. Murakami, S. Higashi, S. Miyazaki, T. Kawahara, K. Torii, Y. Nara Electrochemical Society	11 国際会議録 THEORETICAL INVESTIGATION OF THE INTERFACES BETWEEN HF-BASED HIGH-K DIELECTRICS AND POLY-SI AND METAL GATES SHIRAISHI, K. 1,2,, NAKAYAMA, T. 3, AKASAKA, Y. 4, MlIYAZAKI, S. 5,2,, NAKAOKA, T. 1, OHMORI, K. 2, AHMET, P. 2, TORII, … Electrochemical Society
6 国際会議録 Theoretical Studies on the Physical Properties of Poly-Si and Metal Gates/HfO₂ Related High-k Dielectrics Interfaces K. Shiraishi, K. Torii, Y. Akasaka, T. Nakayama, T. Nakaoka, S. Miyazaki, T. Chikyow, K. Yamada, Y. Nara Electrochemical Society	12 国際会議録 Novel Fabrication Process to Realize Ultra-Thin (EOT=0.7nm) and Ultra-Low Leakage SiON Gate Dielectrics K. Muraoka, D. Matsushita, K. Kato, Y. Nakasaki, S. Inumiya, K. Eguchi, M. Takayanagi Electrochemical Society

1

2

3

4

5

6

7

8

9

10

11

12