Characteristics of the HfO₂ Thin Films Grown by Remote Plasma Atomic Layer Deposition Method on the Plasma Oxidized Si Substrate

Characteristics of the HfO₂ Thin Films Grown by Remote Plasma Atomic Layer Deposition Method on the Plasma Oxidized Si Substrate

著者名:

掲載資料名:

Physics and technology of high-k gate dielectrics III

シリーズ名:

ECS transactions

シリーズ巻号:

1(5)

発行年:

2006

開始ページ:

459

終了ページ:

464

総ページ数:

6

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

19385862

ISBN:

9781566774444 [1566774446]

言語:

英語

請求記号:

E23400/1-5

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00047099
シリーズID:	PA00000034
会議名:	International Symposium on High Dielectric Constant Materials: Materials Science, Processing, Reliability, and Manufacturing Issues
回次:	3rd
会議開催地:	Los Angeles, California, USA
会議開催年:	2005.10.16-2005.10.21

類似資料:

1 国際会議録 HfO2 Thin Film Deposited by Remote Plasma Atomic Layer Deposition Method S. Kim, H. Jeon Electrochemical Society	7 国際会議録 Effects of Post-Annealing on the Electrical and Optical Properties of ZnO Thin Films Grown on Al2O3 Substrates by Atomic Layer Epitaxy C.M. Lee, Y.J. Cho, H.J. Kim, W.W. Lee, H.W. Kim, C.K. Hwangbo, J.G. Lee Trans Tech Publications
2 国際会議録 Structural study of ZrO2 and HfO2 thin films grown by atomic layer deposition [5946-14] Niilisk, A., Aarik, J., Uustare, T., Mamdar, H, Tkachev, S., Manghnani, M. SPIE - The International Society of Optical Engineering	8 国際会議録 The Improvement in Dielectric Characteristics and Reliability of Atomic-Layer-Deposited HfO₂ Thin Films by In-Situ NH₃ Injection J. Kim, T. Park, M. Cho, M. Seo, J. Jang, C. Hwang Electrochemical Society
3 国際会議録 Characteristics of ZrO2/Al2O3 Bilayer Film for Gate Dielectric Applications Deposited by Atomic Layer Deposition Method Kim, Y.D., Lee, J.H., Koo, J.H, Chang, H.J., Jeon, H.T. Trans Tech Publications	9 国際会議録 Crystallization and Wet Etching Characteristics of Atomic Layer Deposited HfO₂ Films Using Hf[N(CH₃)(C₂H₅)]₃[OC(CH₃)₃]) Precursor and O₃ Oxidant M. Seo, S. Kim, K. Kim, T. Park, J. Kim, C. Hwang, H. Cho Electrochemical Society
4 国際会議録 Characteristics of ZoO Thin Films by Means of Plasma Enhanced Atomic Layer Deposition S. K. Park, H. Kwack, J. Lee, C. Hwang, H. Chu Electrochemical Society	10 国際会議録 * Ultra Thin High-K Dielectrics Grown by Atomic Layer Deposition: A Comparative Study of ZrO2, HfO2, Y2O3 and Al2O3 Gusev, E.P., Canter, E., Copel, M., Gribelyuk, M., Buchanan, D.A., Okorn-Schmidt, H., D'Emic, C., Kozlowski, P., … Electrochemical Society
5 国際会議録 Oxidant Effect on Resistance Switching Characteristics of HfO2 film Grown Atomic Layer Deposition I. Park, J. Lee, S. Yoon, K. Jung, S. Lee Electrochemical Society	11 国際会議録 Chemical and Electrical Properties of ZnS Deposited with DEZ and H2S by Atomic Layer Deposition Method S.W. Kuk, S.H. Bang, I.H. Kim, S.Y. Jeon, H.T. Jeon, H.H. Park, H.J. Chang Trans Tech Publications
6 国際会議録 Influence of Deposition Temperature of Atomic-Layer-Deposited HfO₂ Films on Interfacial Chemical Structure and Interface Trap Density J. Kim, T. Park, C. Hwang, S. H. Hong, M. Seo Electrochemical Society	12 国際会議録 Plasma Enhanced Atomic Layer Deposition Of ZrO2 Gate Dielectric Koo, Jaehyoung, Han, Jiwoong, Choi, Sungwoo, Park, Chan Gyung, Kim, Yangdo, Jeon, Hyeongtag Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12