Effects of the Defects at HfOxNy/Si Interface on Electrical and Reliability Charucteristics of MOS Devices

Effects of the Defects at HfOxNy/Si Interface on Electrical and Reliability Charucteristics of MOS Devices

著者名:

K. Chang-Liao

掲載資料名:

Physics and technology of high-k gate dielectrics III

シリーズ名:

ECS transactions

シリーズ巻号:

1(5)

発行年:

2006

開始ページ:

399

終了ページ:

406

総ページ数:

8

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

19385862

ISBN:

9781566774444 [1566774446]

言語:

英語

請求記号:

E23400/1-5

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00047099
シリーズID:	PA00000034
会議名:	International Symposium on High Dielectric Constant Materials: Materials Science, Processing, Reliability, and Manufacturing Issues
回次:	3rd
会議開催地:	Los Angeles, California, USA
会議開催年:	2005.10.16-2005.10.21

類似資料:

1 国際会議録 Chemical dry cleaning and pretreatment on the electrical and reliability characteristic of high-k gate dielectrics in MOS device (Invited Paper) Cheng, C.-L., Wang, T.-K., Chang-Liao, K.-S. SPIE-The International Society for Optical Engineering	7 国際会議録 Improved Reliability of Silicon Dioxide in MOS Devices by Nitrogen Pileup at Poly-Si I Silicon Dioxide Interface. Chang-Liao, K., Ku, J. Electrochemical Society
2 国際会議録 41 Interstitial Oxygen Defect at Si Surface on Electrical Characteristics of High-K Gated MOS Devices Chang-Liao, K. S., Cheng, C. L., Wang, T. K. Electrochemical Society	8 国際会議録 Reliability and Plasma-Induced Degradation of High-K Gate Dielectrics in MOS Devices K.-S. Chang-Liao, P.-J. Tzeng Electrochemical Society
3 国際会議録 Electrical Properties and the Reliability of Silicon Nitride Gate Dielectrics Formed by Various Processes and Annealing Treatments Chang-Liao, K-S., Pan, J.Y, Cheng, C.L., Wang, T.K Electrochemical Society	9 国際会議録 Novel device structure for low-temperature polysilicon TFTs with controlled grain growth in channel regions Cheng,L.-J., Lu,Y.-L., Lin,C.-W., Chang,T.-K., Cheng,H.-C. SPIE - The International Society for Optical Engineering
4 国際会議録 Integration of Hfx Tay N Metal Gate Electrode with High-k Gate Dielectric in MOS Devices K. Chang-Liao, C. Cheng, T. Wang, Y. Wang Electrochemical Society	10 国際会議録 Patterning effect and correlated electrical model of post-OPC MOSFET devices Y. C. Cheng, T. H. Ou, M. H. Wu, W. L. Wang, J. H. Feng, W. C. Huang, C. M. Lai, R. G. Liu, Y. C. Ku SPIE - The International Society of Optical Engineering
5 国際会議録 Electrical Characterization of HfO xN y Gate Dielectric with Different Nitrogen Concentration Profiles Formed by Rapid Thermal Annealing Cheng, C.-L., Chang-Liao, K.-S., Wang, T.-K. Electrochemical Society	11 国際会議録 Ultrathin Oxide Reliability: Effects of Gate Doping Concentration and Poly- Si/SiO2 Interface Stress Relaxation Wristers, D., Wang, H.H., Han, L.K., Lin, C., Chen, T.S., Kwong, D.L., Fulford, J. Electrochemical Society
6 国際会議録 Effects of Arsenic Concentration Profile on Electric Properties of Gate Oxide in MOS Devices Chang-Liao, K.-S., Chuang, C.-S. Electrochemical Society	12 国際会議録 The Effects of Device Dimension, Substrate Temperature, and Gate Metallization on the Reliability of AlGaN/GaN High Electron Mobility Transistors F. Ren, S.J. Pearton, Lu Liu, T.-S. Kang, E.A. Douglas, C.Y. Chang, C.-F. Lo, D.A. Cullen, L. Zhou, D.J. Smith Materials Research Society

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