Band Edge Traps at Spectroscopically-Detected O-Atom Vacancies in Nanocrystalline ZrO₂ and HfO₂: An Engineering Solution for Elimination of O-Atom Vacancy Defects in Non-crystalline Temary Silicate Alloys

Band Edge Traps at Spectroscopically-Detected O-Atom Vacancies in Nanocrystalline ZrO₂ and HfO₂: An Engineering Solution for Elimination of O-Atom Vacancy Defects in Non-crystalline Temary Silicate Alloys

著者名:

G. Lucovsky

掲載資料名:

Physics and technology of high-k gate dielectrics III

シリーズ名:

ECS transactions

シリーズ巻号:

1(5)

発行年:

2006

開始ページ:

381

終了ページ:

392

総ページ数:

12

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

19385862

ISBN:

9781566774444 [1566774446]

言語:

英語

請求記号:

E23400/1-5

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00047099
シリーズID:	PA00000034
会議名:	International Symposium on High Dielectric Constant Materials: Materials Science, Processing, Reliability, and Manufacturing Issues
回次:	3rd
会議開催地:	Los Angeles, California, USA
会議開催年:	2005.10.16-2005.10.21

類似資料:

1 国際会議録 Spectroscopic Studies of Band Edge Electronic and Defect States in Elemental High-k Oxide Dielectrics and Si Oxynitride Alloys onto Si(100) Substrates G. Lucovsky, H. Seo, L. Fleming, M. Ulrich, J. Lüning Electrochemical Society	7 国際会議録 Bonded Hydrogen Atom Participation in Metastable Defect Formation in Hydrogenated Amorphous Silicon Lucovsky, G., Yang, H. MRS - Materials Research Society
2 国際会議録 * High-K Gate Dielectrics: HfO 2, ZrO 2, and Their Silicates Nieh, R., Onishi, K., Choi, R., Dharmarajan, E., Gopalan, S., Kang, C.S., Lee, J.C. Electrochemical Society	8 国際会議録 "Phase relations and nanocrystalline alloys in the ternary systems ZrO2 (HfO2)-Y2O3-La2O3 (Eu2O3, Er2O3)" ANDRIEVSKAYA,E.R. Kluwer Academic Publishers
3 国際会議録 Electrical Performance of MOS Devices with Plasma Deposited ZrO2-SiO2 Pseudo-Binary Silicate Alloys Therrien, R., Rayner, B., Lucovsky, C. Electrochemical Society	9 国際会議録 Influence of Deposition Temperature of Atomic-Layer-Deposited HfO₂ Films on Interfacial Chemical Structure and Interface Trap Density J. Kim, T. Park, C. Hwang, S. H. Hong, M. Seo Electrochemical Society
4 国際会議録 Defects and Defect Precursor Reductions in Non-Crystalline Thin Films: Intermediate Phases Generated by Chemcial Bonding Self- Organizations G. Lucovsky, J. Phillips, S. Kasap Electrochemical Society	10 国際会議録 Defect Energy Levels in HfO2, ZrO2, La2O3 and SrTiO3 Xiong, K., Peacock, P.W., Robertson, J. Materials Research Society
5 国際会議録 ELECTRONIC STRUCTURE OF NON-CRYSTALLINE HIGH-K TRANSITION METAL AND RARE EARTH OXIDES AND THEIR SILICATE AND ALUMINATE ALLOYS Zhang, Y., Lucovsky, O., Rayner, G.B., Appel, G., Ade, H., Whitten, J.L. Electrochemical Society	11 国際会議録 Determination of band offsets of Al2O3, ZrO2, HfO2, TiO2, Ta2O5, Nb2O5. Afanas'ev, Stesmans Electrochemical Society
6 国際会議録 ELECTRONIC STRUCTURE OF NON-CRYSTALLINE HIGH-K TRANSITION METAL AND RARE EARTH OXIDES AND THEIR SILICATE AND ALUMINATE ALLOYS Zhang, Y., Lucovsky, O., Rayner, G.B., Appel, G., Ade, H., Whitten, J.L. Electrochemical Society	12 国際会議録 Diffusion Of Hydrogen And Deuterium In Stack Systems Of SixNyH2/SixNyDz, And Crystalline Si Boehme, C., Lucovsky, G. Materials Research Society

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