Threshold Voltage Control in PMOSFETs with Polysilicon or Fully-Silicided Gates on Hf-Based Gate Dielectric Using Controlled Lateral Oxidation
- 著者名:
V. S. Kaushik K. Rohr S. Hyun S. De Gendt S. Van Elshocht A. Debbie J. Everoert A. Veboso S. Brus L. Ragnarason O. Richard M. Caymax M. Heyns - 掲載資料名:
- Physics and technology of high-k gate dielectrics III
- シリーズ名:
- ECS transactions
- シリーズ巻号:
- 1(5)
- 発行年:
- 2006
- 開始ページ:
- 305
- 終了ページ:
- 312
- 総ページ数:
- 8
- 出版情報:
- Pennington, N.J.: Electrochemical Society
- ISSN:
- 19385862
- ISBN:
- 9781566774444 [1566774446]
- 言語:
- 英語
- 請求記号:
- E23400/1-5
- 資料種別:
- 国際会議録
類似資料:
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8
国際会議録
13 High-k Gate Stack Engineering - towards Meeting Low Standby Power and High Performance Targets
Electrochemical Society |
Materials Research Society |
Materials Research Society |
Materials Research Society |
Electrochemical Society |
Electrochemical Society |
Electrochemical Society |
Electrochemical Society |
Materials Research Society |