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Ruthenium and Ruthenium Oxide Films Deposition by MOCVD Using Ru(DMPD)₂

著者名:
掲載資料名:
Physics and technology of high-k gate dielectrics III
シリーズ名:
ECS transactions
シリーズ巻号:
1(5)
発行年:
2006
開始ページ:
139
終了ページ:
144
総ページ数:
6
出版情報:
Pennington, N.J.: Electrochemical Society
ISSN:
19385862
ISBN:
9781566774444 [1566774446]
言語:
英語
請求記号:
E23400/1-5
資料種別:
国際会議録

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