Determination of Band Offsets at the AIN/SiC Interface
- 著者名:
- 掲載資料名:
- State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLIII) and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics VI
- シリーズ名:
- ECS transactions
- シリーズ巻号:
- 1(2)
- 発行年:
- 2006
- 開始ページ:
- 220
- 終了ページ:
- 227
- 総ページ数:
- 8
- 出版情報:
- Pennington, N.J.: Electrochemical Society
- ISSN:
- 19385862
- ISBN:
- 9781566774314 [1566774314]
- 言語:
- 英語
- 請求記号:
- E23400/1-2
- 資料種別:
- 国際会議録
類似資料:
1
国際会議録
Experimental and First-Principles Studies of the Band Alignment at the HfO2/4H-SiC (0001) Interface
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4
国際会議録
MORPHOLOGY AND INTERFACE CHEMISTRY OF THE INITIAL GROWTH OF GaN AND AIN ON α-SiC AND SAPPHIRE
Materials Research Society |
American Institute of Chemical Engineers |
SPIE-The International Society for Optical Engineering |
Trans Tech Publications |
MRS - Materials Research Society |
Trans Tech Publications |