Roles of Predominant and Subordinate Carriers in Breakdown Mechanism of High-k Gate Dielectrics Studied with HfAlOx/SiO₂ Stacks

Roles of Predominant and Subordinate Carriers in Breakdown Mechanism of High-k Gate Dielectrics Studied with HfAlOx/SiO₂ Stacks

著者名:

K. Okada

掲載資料名:

Physics and Chemistry of SiO2 and the Si-SiO2 Interface-5

シリーズ名:

ECS transactions

シリーズ巻号:

1(1)

発行年:

2005

開始ページ:

179

終了ページ:

190

総ページ数:

12

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

19385862

ISBN:

9781566774307 [1566774306]

言語:

英語

請求記号:

E23400/1-1

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00047095
シリーズID:	PA00000034
会議名:	International Symposium on The Physics and Chemistry of SiO2 and the Si-SiO2 Interface ; Fall Meeting of the Electrochemical Society
回次:	5th ; 2005
会議開催地:	Los Angeles, CA, USA
会議開催年:	2005.10.16-2005.10.20

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