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Gate Dielectrics for Advanced Semiconductor Devices: Thermally-Grown SiO₂ is a Very Difficult Act to Follow

著者名:
G. Lucovsky  
掲載資料名:
Physics and Chemistry of SiO2 and the Si-SiO2 Interface-5
シリーズ名:
ECS transactions
シリーズ巻号:
1(1)
発行年:
2005
開始ページ:
3
終了ページ:
28
総ページ数:
26
出版情報:
Pennington, N.J.: Electrochemical Society
ISSN:
19385862
ISBN:
9781566774307 [1566774306]
言語:
英語
請求記号:
E23400/1-1
資料種別:
国際会議録

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