Dielectric Properties of Ultra Dense (3 g/cm3) Silicon Nitride Deposited by Hot Wire CVD at Industrially Relevant High Deposition Rates

Dielectric Properties of Ultra Dense (3 g/cm3) Silicon Nitride Deposited by Hot Wire CVD at Industrially Relevant High Deposition Rates

著者名:

掲載資料名:

Amorphous and polycrystalline thin-film silicon science and technology--2007 : symposium held April 9-13, 2007, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

989

発行年:

2007

開始ページ:

67

終了ページ:

74

総ページ数:

8

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558999497 [1558999493]

言語:

英語

請求記号:

M23500/989

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00048532
シリーズID:	PA00000011
会議名:	MRS Spring Meeting
回次:	2007
会議開催地:	San Francisco, California
会議開催年:	2007.04.09-2007.04.13

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