Characterization of inverse SRAF for active layer trenches on 45-nm node
- 著者名:
J. -C. Urbani ( STMicroelectronics (France) ) J. -D. Chapon ( STMicroelectronics (France) ) J. Belledent ( NXP Semiconductors (France) ) A. Borjon ( NXP Semiconductors (France) ) C. Couderc ( NXP Semiconductors (France) ) J. -L. Di-Maria ( STMicroelectronics (France) ) V. Farys ( STMicroelectronics (France) ) F. Foussadier ( STMicroelectronics (France) ) C. Gardin ( Freescale Semiconductor, Inc. (France) ) G. Kerrien ( STMicroelectronics (France) ) L. LeCam ( NXP Semiconductors (France) ) C. Martinelli ( STMicroelectronics (France) ) P. Montgomery ( Freescale Semiconductor, Inc. (France) ) N. Morgana ( Freescale Semiconductor, Inc. (France) ) J. Planchot ( STMicroelectronics (France) ) F. Robert ( STMicroelectronics (France) ) Y. Rody ( NXP Semiconductors (France) ) M. Saied ( Freescale Semiconductor, Inc. (France) ) F. Sundermann ( STMicroelectronics (France) ) Y. Trouiller ( CEA-LETI (France) ) F. Vautrin ( STMicroelectronics (France) ) B. Wilkinson ( Freescale Semiconductor, Inc. (France) ) E. Yesilada ( Freescale Semiconductor, Inc. (France) ) - 掲載資料名:
- Photomask and next-generation lithography mask technology XIV
- シリーズ名:
- Proceedings of SPIE - the International Society for Optical Engineering
- シリーズ巻号:
- 6607
- 発行年:
- 2007
- 出版情報:
- Bellingham, Wash.: SPIE - The International Society of Optical Engineering
- ISSN:
- 0277786X
- ISBN:
- 9780819467454 [0819467456]
- 言語:
- 英語
- 請求記号:
- P63600/6607
- 資料種別:
- 国際会議録
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