Scatterometry based profile metrology of two-dimensional patterns of EUV masks
- 著者名:
- I. Pundaleva ( Samsung Electronics Co., Ltd. (South Korea) )
- R. Chalykh ( Samsung Electronics Co., Ltd. (South Korea) )
- H. Kim ( Samsung Electronics Co., Ltd. (South Korea) )
- B. Kim ( Samsung Electronics Co., Ltd. (South Korea) )
- H. Cho ( Samsung Electronics Co., Ltd. (South Korea) )
- 掲載資料名:
- Photomask and next-generation lithography mask technology XIV
- シリーズ名:
- Proceedings of SPIE - the International Society for Optical Engineering
- シリーズ巻号:
- 6607
- 発行年:
- 2007
- 出版情報:
- Bellingham, Wash.: SPIE - The International Society of Optical Engineering
- ISSN:
- 0277786X
- ISBN:
- 9780819467454 [0819467456]
- 言語:
- 英語
- 請求記号:
- P63600/6607
- 資料種別:
- 国際会議録
類似資料:
1
国際会議録
Simulation of critical dimension and profile metrology based on scatterometry method [6349-57]
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SPIE - The International Society of Optical Engineering |
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12
国際会議録
Architectural choices for EUV lithography masks: patterned absorbers and patterned reflectors
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