Masks for flash memory gates for the 45nm node: binary or attenuated?

Masks for flash memory gates for the 45nm node: binary or attenuated?

著者名:

E. van Setten ( ASML Netherlands B.V. (Netherlands) )
A. Engelen ( ASML Netherlands B.V. (Netherlands) )
J. Finders ( ASML Netherlands B.V. (Netherlands) )
M. Dusa ( ASML US, Inc. (USA) )

掲載資料名:

EMLC 2007 : 23rd european mask and lithography conference : 22-25 January 2007, Grenoble, France

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

6533

発行年:

2007

出版情報:

Bellingham, Wash.: SPIE - The International Society of Optical Engineering

ISSN:

0277786X

ISBN:

9780819466556 [0819466557]

言語:

英語

請求記号:

P63600/6533

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00046840
シリーズID:	PA00000029
会議名:	European Mask and Lithography Conference
回次:	2007 : 23rd
会議開催地:	Grenoble, France
会議開催年:	2007.01.22-2007.01.25

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