A method for generating assist-features in full-chip scale and its application to contact layers of sub-70nm DRAM devices

A method for generating assist-features in full-chip scale and its application to contact layers of sub-70nm DRAM devices

著者名:

D. Park ( SAMSUNG Electronics Co., Ltd. (South Korea) )

S. Kim ( SAMSUNG Electronics Co., Ltd. (South Korea) )

C. Hwang ( SAMSUNG Electronics Co., Ltd. (South Korea) )

S. Lee ( SAMSUNG Electronics Co., Ltd. (South Korea) )

H. Cho ( SAMSUNG Electronics Co., Ltd. (South Korea) )

J. Moon ( SAMSUNG Electronics Co., Ltd. (South Korea) )

さらに 1 件

掲載資料名:

Optical microlithography XX

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

6520

発行年:

2007

出版情報:

Bellingham, Wash.: SPIE - The International Society of Optical Engineering

ISSN:

0277786X

ISBN:

9780819466396 [0819466395]

言語:

英語

請求記号:

P63600/6520

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00046827
シリーズID:	PA00000029
会議名:	SPIE Advanced Lithography : Optical Microlithography
回次:	2007 : 20th
会議開催地:	San Jose, CA, USA
会議開催年:	2007.02.27-2007.03.02

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