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GaN/AlN multiple quantum well structures grown by MBE on GaN templates for 1.55 μm intersubband absorption

著者名:
T. Aggerstam ( Royal Institute of Technology, KTH (Sweden) )
T. G. Andersson ( Chalmers Univ. of Technology (Sweden) )
P. Holmstrom ( Royal Institute of Technology, KTH (Sweden) )
P. Janes ( Royal Institute of Technology, KTH (Sweden) )
X. Y. Liu ( Chalmers Univ. of Technology (Sweden) )
S. Lourdudoss ( Royal Institute of Technology, KTH (Sweden) )
L. Thylen ( Royal Institute of Technology, KTH (Sweden) )
さらに 2 件
掲載資料名:
Quantum sensing and nanophotonic devices IV : 22-25 January 2007, San Jose, California, USA
シリーズ名:
Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号:
6479
発行年:
2007
出版情報:
Bellingham, Wash.: SPIE - The International Society of Optical Engineering
ISSN:
0277786X
ISBN:
9780819465924 [0819465925]
言語:
英語
請求記号:
P63600/6479
資料種別:
国際会議録

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