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Epitaxial growth and characterization of AlGaN/GaN HEMT devices on SiC substrates for RF applications

著者名:
A. K. Sood ( Magnolia Optical Technologies, Inc. (USA) )
Y. R. Puri ( Magnolia Optical Technologies, Inc. (USA) )
F. W. Clarke ( U.S. Army Space and Missile Defense Command (USA) )
J. Deng ( Lehigh Univ. (USA) )
J. C. M. Hwang ( Lehigh Univ. (USA) )
S. K. Brierley ( Raytheon RF Components (USA) )
M. A. Khan ( Univ. of South Carolina (USA) )
A. Dabiran ( SVT Associates, Inc. (USA) )
P. Chow ( SVT Associates, Inc. (USA) )
O. A. Laboutin ( Kopin Corp. (USA) )
R. E. Welser ( Kopin Corp. (USA) )
さらに 6 件
掲載資料名:
Gallium nitride materials and devices II : 22-25 January 2007, San Jose, California, USA
シリーズ名:
Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号:
6473
発行年:
2007
出版情報:
Bellingham, Wash.: SPIE - The International Society of Optical Engineering
ISSN:
0277786X
ISBN:
9780819465863 [0819465860]
言語:
英語
請求記号:
P63600/6473
資料種別:
国際会議録

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