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Growth and polarity control of GaN and AlN on carbon-face SiC by metalorganic vapor phase epitaxy

著者名:
Y. Fu ( Virginia Commonwealth Univ. (USA) )
Q. Fan ( Virginia Commonwealth Univ. (USA) )
S. Chevtchenko ( Virginia Commonwealth Univ. (USA) )
U. Ozgur ( Virginia Commonwealth Univ. (USA) )
H. Morkoc ( Virginia Commonwealth Univ. (USA) )
Y. Ke ( Univ. of Pittsburgh (USA) )
R. Devaty ( Univ. of Pittsburgh (USA) )
W. J. Choyke ( Univ. of Pittsburgh (USA) )
C. K. Inoki ( SUNY/Univ. at Albany (USA) )
T. S. Kuan ( SUNY/Univ. at Albany (USA) )
さらに 5 件
掲載資料名:
Gallium nitride materials and devices II : 22-25 January 2007, San Jose, California, USA
シリーズ名:
Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号:
6473
発行年:
2007
出版情報:
Bellingham, Wash.: SPIE - The International Society of Optical Engineering
ISSN:
0277786X
ISBN:
9780819465863 [0819465860]
言語:
英語
請求記号:
P63600/6473
資料種別:
国際会議録

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