Interaction Between Recombination Enhanced Dislocation Glide Process Activated Basal Stacking Faults and Threading Dislocations in 4H-Silicon Carbide Epitaxial Layers

Interaction Between Recombination Enhanced Dislocation Glide Process Activated Basal Stacking Faults and Threading Dislocations in 4H-Silicon Carbide Epitaxial Layers

著者名:

掲載資料名:

Semiconductor defect engineering--materials, synthetic structures and devices II : symposium held April 9-13, 2007, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

994

発行年:

2007

開始ページ:

335

終了ページ:

340

総ページ数:

6

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558999541 [155899954X]

言語:

英語

請求記号:

M23500/994

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00046631
シリーズID:	PA00000011
会議名:	MRS Spring Meeting : Symposium F
回次:	2007
会議開催地:	San Francisco, California, USA
会議開催年:	2007.04.09-2007.04.13

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