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Defect Reduction and Its Mechanism of Selective Ge Epitaxy in Trenches on Si(001) Substrates Using Aspect Ratio Trapping

著者名:
J.-S. Park
J. Bai
M. Curtin
B. Adekore
Z. Cheng
M. Carroll
M. Dudley
A. Lochtefeld
さらに 3 件
掲載資料名:
Semiconductor defect engineering--materials, synthetic structures and devices II : symposium held April 9-13, 2007, San Francisco, California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
994
発行年:
2007
開始ページ:
315
終了ページ:
320
総ページ数:
6
出版情報:
Warrendale, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558999541 [155899954X]
言語:
英語
請求記号:
M23500/994
資料種別:
国際会議録

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