TCAD Modeling and Simulation of Sub-100nm Gate Length Silicon and GaN Based SOI MOSFETs
- 著者名:
Lei Ma Yawei Jin Chang Zeng Krishnanshu Dandu Mark Johnson Doug William Barlage - 掲載資料名:
- Transistor scaling--methods, materials and modeling : symposium held April 18-19, 2006, San Francisco, California, U.S.A.
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 913
- 発行年:
- 2006
- 開始ページ:
- 191
- 終了ページ:
- 200
- 総ページ数:
- 10
- 出版情報:
- Warrendale, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558998698 [1558998691]
- 言語:
- 英語
- 請求記号:
- M23500/913
- 資料種別:
- 国際会議録
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Comparison of partially and fully depleted SOI transistors down to the sub 50-nm-gate length regime
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