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The Behavior of Ion Implanted Silicon During Ultra-High Temperature Annealing

著者名:
Amitabh Jain  
掲載資料名:
Doping engineering for device fabrication : symposium held April 18-19, 2006, San Francisco, California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
912
発行年:
2006
開始ページ:
143
終了ページ:
148
総ページ数:
6
出版情報:
Warrendale, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558998681 [1558998683]
言語:
英語
請求記号:
M23500/912
資料種別:
国際会議録

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