Modeling and Simulation of the Influence of SOI Structure on Damage Evolution and Ultra-Shallow Junction Formed by Ge Preamorphization Implants and Solid Phase Epitaxial Regrowth | 東京工業大学附属図書館文献データベース

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Modeling and Simulation of the Influence of SOI Structure on Damage Evolution and Ultra-Shallow Junction Formed by Ge Preamorphization Implants and Solid Phase Epitaxial Regrowth

著者名:

M.P. Srinivasan

I. Martin-Bragado

さらに 5 件

掲載資料名:

Doping engineering for device fabrication : symposium held April 18-19, 2006, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

912

発行年:

2006

開始ページ:

99

終了ページ:

104

総ページ数:

6

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558998681 [1558998683]

言語:

英語

請求記号:

M23500/912

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00046616
シリーズID:	PA00000011
会議名:	MRS Spring Meeting : Symposium C
回次:	2006
会議開催地:	San Francisco, California, USA
会議開催年:	2006.04.18-2006.04.19

類似資料:

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2 国際会議録 Physics-Based Diffusion Simulations for Preamorphized Ultra-Shallow Junctions Cowern, N. E. B., Colombeau, B., Lampin, E., Cristiano, F., Claverie, A., Lamrani, Y., Duffy, R., Venezia, V., Heringa, … Materials Research Society	8 国際会議録 The Role of Preamorphization and Activation for Ultra Shallow Junction Formation on Strained Si Layers Grown on SiGe Buffer Pawlak, B.J., Vandervorst, W., Lindsay, R., Wolf, I.De, Roozeboom, F., Delhougne, R., Benedetti, A., Loo, R., Caymax, … Materials Research Society
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