Deep Levels and Compensation in High Purity Semi-Insulating 4H-SiC
- 著者名:
- 掲載資料名:
- Silicon carbide 2006--materials, processing and devices : symposium held April 18-20, 2006, San Francisco, California, U.S.A.
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 911
- 発行年:
- 2006
- 開始ページ:
- 213
- 終了ページ:
- 218
- 総ページ数:
- 6
- 出版情報:
- Warrendale, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558998674 [1558998675]
- 言語:
- 英語
- 請求記号:
- M23500/911
- 資料種別:
- 国際会議録
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10
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Study of Deep Levels by Admittance Spectroscopy in High Resistivity P-Type 6H-SiC Single Crystals
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