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Deep Levels and Compensation in High Purity Semi-Insulating 4H-SiC

著者名:
掲載資料名:
Silicon carbide 2006--materials, processing and devices : symposium held April 18-20, 2006, San Francisco, California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
911
発行年:
2006
巻:
911
開始ページ:
213
終了ページ:
218
総ページ数:
6
出版情報:
Warrendale, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558998674 [1558998675]
言語:
英語
請求記号:
M23500/911
資料種別:
国際会議録

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