Characterization of Semi-Insulating SiC

Characterization of Semi-Insulating SiC

著者名:

掲載資料名:

Silicon carbide 2006--materials, processing and devices : symposium held April 18-20, 2006, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

911

発行年:

2006

開始ページ:

201

終了ページ:

212

総ページ数:

12

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558998674 [1558998675]

言語:

英語

請求記号:

M23500/911

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00046615
シリーズID:	PA00000011
会議名:	MRS Spring Meeting : Symposium B
回次:	2006
会議開催地:	San Francisco, California, USA
会議開催年:	2006.04.18-2006.04.20

類似資料:

1 国際会議録 Deep Levels Responsible for Semi-Insulating Behavior in Vanadium-Doped 4H-SiC Substrates N.T. Son, P. Carlsson, A. Gällström, B. Magnusson, E. Janzén Trans Tech Publications	7 国際会議録 Optical Studies of Deep Centers in Semi-Insulating SiC Magnusson, B., Aavikko, R., Saarinen, K., Son, N.T., Janzen, E. Trans Tech Publications
2 国際会議録 Intrinsic Defects in Semi-Insulating SiC: Deep Levels and their Roles in Carrier Compensation N.T. Son, P. Carlsson, B. Magnusson, E. Janzen Trans Tech Publications	8 国際会議録 Clustering of Vacancies in Semi-Insulating SiC Observed with Positron Spectroscopy Aavikko, R., Saarinen, K., Magnusson, B., Janzen, E. Trans Tech Publications
3 国際会議録 Defects in Semi-Insulating SiC Substrates Son, N.T., Magnusson, B., Zolnai, Z., Ellison, A., Janzen, E. Trans Tech Publications	9 国際会議録 Time-Resolved Photoluminescence of Deep Centers in Semi-Insulating 4H-SiC Magnusson, B., Bergman, J.P., Janzen, E. Trans Tech Publications
4 国際会議録 Defects in High-Purity Semi-Insulating SiC Son, N.T., Magnusson, B., Zolnai, Z., Ellison, A., Janzen, E. Trans Tech Publications	10 国際会議録 Intrinsic Defects in HPSI 6H-SiC: An EPR Study P. Carlsson, N.T. Son, B. Magnusson, A. Henry, E. Janzén Trans Tech Publications
5 国際会議録 HTCVD Grown Semi-Insulating SiC Substrates Ellison, A., Magnusson, B., Son, N.T., Storasta, L., Janzen, E. Trans Tech Publications	11 国際会議録 Point Defects in SiC Ádám Gali, Michel Bockstedte, Ngyen Tien Son, Erik Janzén Materials Research Society
6 国際会議録 Influence of Cooling Rate after High Temperature Annealing on Deep Levels in High-Purity Semi-Insulating 4H-SiC A. Gallstrorm, B. Magnusson, P. Carlsson, N.T. Son, A. Henry, F. Beyer, M. Syvajarvi, R. Yakimova, E. Janzen Trans Tech Publications	12 国際会議録 The Silicon Vacancy in SiC E. Janzén, A. Gali, P. Carlsson, A. Gällström, B. Magnusson Trans Tech Publications

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