High-Resolution X-ray Topography of Dislocations in 4H-SiC Epilayers

High-Resolution X-ray Topography of Dislocations in 4H-SiC Epilayers

著者名:

掲載資料名:

Silicon carbide 2006--materials, processing and devices : symposium held April 18-20, 2006, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

911

発行年:

2006

開始ページ:

175

終了ページ:

180

総ページ数:

6

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558998674 [1558998675]

言語:

英語

請求記号:

M23500/911

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00046615
シリーズID:	PA00000011
会議名:	MRS Spring Meeting : Symposium B
回次:	2006
会議開催地:	San Francisco, California, USA
会議開催年:	2006.04.18-2006.04.20

類似資料:

1 国際会議録 High-Resolution Topography Analysis on Threading Edge Dislocations in 4H-SiC Epilayers I. Kamata, M. Nagano, H. Tsuchida, Y. Chen, M. Dudley Trans Tech Publications	7 国際会議録 Influence of Growth Conditions and Substrate Properties on Formation of Interfacial Dislocations and Dislocation Half-loop Arrays in 4H-SiC(0001) and (000-1) … Hidekazu Tsuchida, Isaho Kamata, Kazutoshi Kojima, Kenji Momose, Michiya Odawara, Tetsuo Takahashi, Yuuki Ishida, … Materials Research Society
2 国際会議録 Simulation of Threading Edge Dislocation Images in X-Ray Topographs of Silicon Carbide Homo-Epilayers Vetter, W.M., Tsuchida, H., Kamata, I., Dudley, M. Trans Tech Publications	8 国際会議録 X-Ray Three-Dimensional Topography Imaging of Basal-Plane and Threading-Edge Dislocations in 4H-SiC R. Tanuma, D. Mori, I. Kamata, H. Tsuchida Trans Tech Publications
3 国際会議録 Characterization of Basal Plane Dislocations in 4H-SiC Substrates by Topography Analysis of Threading Edge Dislocations in Epilayers I. Kamata, M. Nagano, H. Tsuchida Trans Tech Publications	9 国際会議録 Migration of Dislocations in 4H-SiC Epilayers during the Ion Implantation Process H. Tsuchida, I. Kamata, M. Nagano, L. Storasta, T. Miyanagi Trans Tech Publications
4 国際会議録 Photoluminescence Imaging and Discrimination of Threading Dislocations in 4H-SiC Epilayers M. Nagano, I. Kamata, H. Tsuchida Trans Tech Publications	10 国際会議録 Fabrication of 3.4kV High Voltage n-Type 4H-SiC Schottky Barrier Diodes Using Thick Epitaxial Layers Tsuji, Takashi, Fujisawa, Hiroyuki, Ogino, Shinji, Tsuchida, Hidekazu, Kamata, Isaho, Jikimoto, Tamotsu, Izumi, Kunikazu Materials Research Society
5 国際会議録 Photoluminescence Imaging and Discrimination of Threading Dislocations in 4H-SiC Epilayers M. Nagano, I. Kamata, H. Tsuchida Trans Tech Publications	11 国際会議録 Imaging and Strain Analysis of Threading-Edge and Basal-Plane Dislocations in 4H-SiC Using X-Ray Three-Dimensional Topography R. Tanuma, D. Mori, I. Kamata, H. Tsuchida Trans Tech Publications
6 国際会議録 Synchrotron White Beam X-Ray Topography and High Resolution Triple Axis X-Ray Diffraction Studies of Defects in SiC Substrates, Epilayers and Devices Dudley, M., Huang, X., Vetter, W.M., Neudeck, P.G. Trans Tech Publications	12 国際会議録 Conversion of Basal Plane Dislocations to Threading Edge Dislocations by Annealing 4H-SiC Epilayers at High Temperatures X. Zhang, M. Nagano, H. Tsuchida Trans Tech Publications

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