Effects of Different Defect Types on the Performance of Devices Fabricated on a 4H-SiC Homoepitaxial Layer

Effects of Different Defect Types on the Performance of Devices Fabricated on a 4H-SiC Homoepitaxial Layer

著者名:

Hui Chen

Balaji Raghothamachar

掲載資料名:

Silicon carbide 2006--materials, processing and devices : symposium held April 18-20, 2006, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

911

発行年:

2006

開始ページ:

169

終了ページ:

174

総ページ数:

6

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558998674 [1558998675]

言語:

英語

請求記号:

M23500/911

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00046615
シリーズID:	PA00000011
会議名:	MRS Spring Meeting : Symposium B
回次:	2006
会議開催地:	San Francisco, California, USA
会議開催年:	2006.04.18-2006.04.20

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