Homoepitaxial Growth on 4H-SiC Substrates by Chemical Vapor Deposition | 東京工業大学附属図書館文献データベース

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Homoepitaxial Growth on 4H-SiC Substrates by Chemical Vapor Deposition

著者名:

Christer Hallin

Igor Khlebnikov

Yuri Khlebnikov

さらに 5 件

掲載資料名:

Silicon carbide 2006--materials, processing and devices : symposium held April 18-20, 2006, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

911

発行年:

2006

開始ページ:

113

終了ページ:

118

総ページ数:

6

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558998674 [1558998675]

言語:

英語

請求記号:

M23500/911

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00046615
シリーズID:	PA00000011
会議名:	MRS Spring Meeting : Symposium B
回次:	2006
会議開催地:	San Francisco, California, USA
会議開催年:	2006.04.18-2006.04.20

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1 国際会議録 Growth of Micropipe-Free Single Crystal Silicon Carbide (SiC) Ingots via PhySiCal Vapor Transport (PVT) Basceri, C., Khlebnikov, I., Khlebnikov, Y., Muzykov, P., Sharma, M., Stratiy, G., Silan, M., Balkas, C.M. Trans Tech Publications	7 国際会議録 Homoepitaxial On-Axis Growth of 4H- and 6H-SiC by CVD Hallin, C., Wahab, Q., Ivanov, I., Bergman, P., Janzen, E. Trans Tech Publications
2 国際会議録 Point and Planar Defect Formation in SiC During PVT Growth Drachev, Roman V., Khlebnikov, Yuri I., Rhodes, Curtis A., Cherednichenko, Dmitry I., Khlebnikov, Igor I., Sudarshan, … Materials Research Society	8 国際会議録 Growth of Homoepitaxial Films on 4H-SiC(11-20)and 8° Off-Axis 4H-SiC(0001) Substrates and their Characterization Bishop, S.M., Preble, E.A., Hallin, C., Henry, A., Storasta, L., Jacobson, H., Wagner, B.P., Reitmeier, Z.J., Janzen, … Trans Tech Publications
3 国際会議録 Homoepitaxial Growth of 4H-SiC on Trenched Substrates by Chemical Vapor Deposition Chen, Yi, Kimoto, T., Takeuchi, Y., Malhan, R.K., Matsunami, H. Trans Tech Publications	9 国際会議録 SiC Epitaxial Growth on Multiple 100-mm Wafers and its Application to Power-Switching Devices A.A. Burk, M.J. O'Loughlin, J.J. Sumakeris, C. Hallin, E. Berkman Trans Tech Publications
4 国際会議録 Dislocation Content of Etch Pits in Hexagonal Silicon Carbide Khlebnikov, Igor I., Lari, Mohsen B., Khlebnikov, Yuri I., Bondokov, Robert T., Ayyagari, Ramakrishna, Muzykov, Peter, … Materials Research Society	10 国際会議録 Homoepitaxial Growth of Si by Remote Plasma Chemical Vapor Deposition Habermehl, S., Lucovsky, G. American Institute of Chemical Engineers
5 国際会議録 One of Many Sources of Defect Generation in SiC Khlebnikov, Igor I., Khlebnikov, Yuri I., Wood, Colin, Sudarshan, Tangali S. Materials Research Society	11 国際会議録 Homoepitaxial Growth and Characterization of 4H-SiC Epilayers by Low-Pressure Hot-Wall Chemical Vapor Deposition Sun, G.S., Ning, J., Gong, Q.C., Gao, X., Wang, L., Liu, X.F., Zeng, Y.P., Li, J.M. Trans Tech Publications
6 国際会議録 An Analytical Study of the SiC Growth Process from Vapor Phase Cherednichenko, D. I., Khlebnikov, Y. I., Khlebnikov, I. I., Soloviev, S. I., Sudarshan, T. S. Trans Tech Publications	12 国際会議録 Simulation of the Large-Area Growth of Homoepitaxial 4H-SiC by Chemical Vapor Deposition Pons, M., Meziere, J., Wang Tang Kuan, S., Blanquet, E., Ferret, P., Di Cioccio, L., Billon, T., Madar, R. Trans Tech Publications

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