Microwave p-i-n Diodes Fabricated on 4H-SiC Material Grown by Sublimation Epitaxy in Vacuum

Microwave p-i-n Diodes Fabricated on 4H-SiC Material Grown by Sublimation Epitaxy in Vacuum

著者名:

N. Camara

掲載資料名:

Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006

シリーズ名:

Materials science forum

シリーズ巻号:

556-557

発行年:

2007

開始ページ:

933

終了ページ:

936

総ページ数:

4

出版情報:

Stafa-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878494422 [0878494421]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00046610
シリーズID:	PA00000012
会議名:	European Conference on Silicon Carbide and Related Materials
回次:	6th
会議開催地:	Newcastle upon Tyne, UK
会議開催年:	2006.09.00

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1 国際会議録 Microwave p-i-n Diodes and Switches Based on 4H-SiC K. Zekentes, N. Camara, L.P. Romanov, A.V. Kirillov, M.S. Boltovets Trans Tech Publications	7 国際会議録 Investigation of Microwave Switching 4HSiC PiN Diodes in the 20-500℃ Temperature Range Boltovets, M. S., Basanets, V. V., Camara, N., Krivutsa, V. A., Zekentes, K. Trans Tech Publications
2 国際会議録 Photoemission of 4H-SiC pin Diodes Epitaxied by the Sublimation Method Camara, N., Zekentes, K., Bano, E., Thuaire, A., Lebedev, A.A. Trans Tech Publications	8 国際会議録 Electroluminescence of p-3C-SiC/n-6H-SiC Heterodiodes, Grown by Sublimation Epitaxy in Vacuum Lebedev, A.A., Strel'chuk, A.M., Kuznetsov, A.N., Savkina, N.S. Trans Tech Publications
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