Blank Cover Image

Degradation of Charge Collection Efficiency Obtained for 6H-SiC n+p Diodes Irradiated with Gold Ions

著者名:
T. Ohshima
T. Satoh
M. Oikawa
S. Onoda
S. Hishiki
T. Hirao
T. Kamiya
T. Yokoyama
A. Sakamoto
R. Tanaka
I. Nakano
G. Wagner
H. Itoh
さらに 8 件
掲載資料名:
Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006
シリーズ名:
Materials science forum
シリーズ巻号:
556-557
発行年:
2007
開始ページ:
913
終了ページ:
916
総ページ数:
4
出版情報:
Stafa-Zuerich: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878494422 [0878494421]
言語:
英語
請求記号:
M23650
資料種別:
国際会議録

類似資料:

1 国際会議録 Degradation of Charge Collection Efficiency for 6H-SiC Diodes by Electron Irradiation

N. Iwamoto, S. Onoda, S. Hishiki, T. Ohshima, M. Murakami

Trans Tech Publications
7 国際会議録 Epitaxial Layer Thickness Dependence on Heavy Ion Induced Charge Collection in 4H-SiC Schottky Barrier Diodes

T. Makino, S. Onoda, N. Hoshino, H. Tsuchida, T. Ohshima

Trans Tech Publications
2 国際会議録 Charge Induced in 6H-SiC PN Diodes by Irradiation of Oxygen Ion Microbeams

Ohshima, T., Satoh, T., Oikawa, M., Onoda, S., Hirao, T., Itoh, H.

Trans Tech Publications
8 国際会議録 Reduction of Interface Traps and Enhancement of Channel Mobility in n-Channel 6H-SiC MOSFETs by Irradiation with Gamma-Rays

S. Hishiki, S.A. Reshanov, T. Ohshima, H. Itoh, G. Pensl

Trans Tech Publications
3 国際会議録 Charge Collection Efficiency of 6H-SiC P+N Diodes Degraded by Low-Energy Electron Irradiation

N. Iwamoto, S. Onoda, T. Ohshima, K. Kojima, A. Koizumi

Trans Tech Publications
9 国際会議録 Current Transient Effect in N-Channel 6H-SiC MOSFET Induced by Heavy Ion Irradiation

K.K. Lee, J.S. Laird, T. Ohshima, S. Onoda, T. Hirao

Trans Tech Publications
4 国際会議録 Defects in an Electron-Irradiated 6H-SiC Diode Studied by Alpha Particle Induced Charge Transient Spectroscopy: Their Impact on the Degraded Charge Collection …

N. Iwamoto, A. Koizumi, S. Onoda, T. Makino, T. Ohshima

Trans Tech Publications
10 国際会議録 Ion-Induced Anomalous Charge Collection Mechanisms in SiC Schottky Barrier Diodes

T. Makino, M. Deki, S. Onoda, N. Hoshino, H. Tsuchida

Trans Tech Publications
5 国際会議録 Transient Response to High Energy Heavy Ions in 6H-SiC n+p Diodes

S. Onoda, T. Ohshima, T. Hirao, S. Hishiki, N. Iwamoto

Trans Tech Publications
11 国際会議録 Effects of Fabrication Process on the Electrical Characteristics of n-Channel MOSFETs Irradiated with Gamma-Rays

S. Hishiki, N. Iwamoto, T. Ohshima, H. Itoh, K. Kojima

Trans Tech Publications
6 国際会議録 Charge Collection Properties of 6H-SiC Diodes by Wide Variety of Charged Particles up to Several Hundreds MeV

S. Onoda, N. Iwamoto, M. Murakami, T. Ohshima, T. Hirao

Trans Tech Publications
12 国際会議録 Generation Mechanisms of Trapped Charges in Oxide Layers of 6H-SiC MOS Structures Irradiated with Gamma-Rays

Yoshikawa,M., Saitoh,K., Ohshima,T., Itoh,H., Nashiyama,I., Takahashi,Y., Ohnishi,K., Okumura,H., Yoshida,S.

Trans Tech Publications
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12