High Throughput SiC Wafer Polishing with Good Surface Morphology

High Throughput SiC Wafer Polishing with Good Surface Morphology

著者名:

T. Kato

掲載資料名:

Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006

シリーズ名:

Materials science forum

シリーズ巻号:

556-557

発行年:

2007

開始ページ:

753

終了ページ:

756

総ページ数:

4

出版情報:

Stafa-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878494422 [0878494421]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00046610
シリーズID:	PA00000012
会議名:	European Conference on Silicon Carbide and Related Materials
回次:	6th
会議開催地:	Newcastle upon Tyne, UK
会議開催年:	2006.09.00

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2 国際会議録 Morphology Improvement of Step Bunching on 4H-SiC Wafers by Polishing Technique T. Kato, A. Kinoshita, K. Wada, T. Nishi, E. Hozomi Trans Tech Publications	8 国際会議録 SiC Single Crystal Growth Rate Measurement by in-Situ Observation using the Transmission X-Ray Technique Oyanagi, N., Nishizawa, S., Kato, T., Yamaguchi, H., Arai, K. Trans Tech Publications
3 国際会議録 Growth and Evaluation of High Quality SiC Crystal by Sublimation Method Oyanagi, N., Yamaguchi, H., Kato, T., Nishizawa, S., Arai, K. Trans Tech Publications	9 国際会議録 Numerical Simulation of Heat and Mass Transfer in SiC Sublimation Growth Nishizawa, S., Kato, T., Kitou, Y., Oyanagi, N., Arai, K. Trans Tech Publications
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