Blank Cover Image

Isochronal Annealing Study of Deep Levels in Hydrogen Implanted p-Type 4H-SiC

著者名:
掲載資料名:
Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006
シリーズ名:
Materials science forum
シリーズ巻号:
556-557
発行年:
2007
巻:
556-557
開始ページ:
591
終了ページ:
594
総ページ数:
4
出版情報:
Stafa-Zuerich: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878494422 [0878494421]
言語:
英語
請求記号:
M23650
資料種別:
国際会議録

類似資料:

K. Kawahara, G. Alfieri, T. Kimoto

Trans Tech Publications

G. Alfieri, T. Kimoto

Trans Tech Publications

K. Kawahara, G. Alfieri, T. Hiyoshi, G. Pensl, T. Kimoto

Trans Tech Publications

G. Alfieri, T. Kimoto

Trans Tech Publications

G. Alfieri, T. Kimoto

Trans Tech Publications

G. Alfieri, T. Kimoto

Trans Tech Publications

G. Alfieri, T. Kimoto

Trans Tech Publications

K. Kawahara, G. Alfieri, M. Krieger, T. Kimoto

Trans Tech Publications

G. Alfieri, T. Kimoto, G. Pensl

Trans Tech Publications

Schoener, A., Miyamoto, N., Kimoto, T., Matsunami, H.

Trans Tech Publications

1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12