The Al2O3/4H-SiC Interface Investigated by Thermal Dielectric Relaxation Current Technique

The Al2O3/4H-SiC Interface Investigated by Thermal Dielectric Relaxation Current Technique

著者名:

掲載資料名:

Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006

シリーズ名:

Materials science forum

シリーズ巻号:

556-557

発行年:

2007

開始ページ:

537

終了ページ:

540

総ページ数:

4

出版情報:

Stafa-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878494422 [0878494421]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00046610
シリーズID:	PA00000012
会議名:	European Conference on Silicon Carbide and Related Materials
回次:	6th
会議開催地:	Newcastle upon Tyne, UK
会議開催年:	2006.09.00

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2 国際会議録 High Temperature Annealing Study of Al2O3 Deposited by ALCVD on n-Type 4H-SiC Avice, M., Grossner, U., Nilsen, O., Christensen, J.S., Fjellvag, H., Svensson, B.G. Trans Tech Publications	8 国際会議録 Characterization of the SiO₂/SiC Interface with Impedance Spectroscopy P.A. Sobas, U. Grossner, B.G. Svensson Trans Tech Publications
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