Ellipsometric and MEIS Studies of 4H-SiC/Si/SiO2 and 4H-SiC/SiO2 Interfaces for MOS Devices

Ellipsometric and MEIS Studies of 4H-SiC/Si/SiO2 and 4H-SiC/SiO2 Interfaces for MOS Devices

著者名:

O.J. Guy

掲載資料名:

Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006

シリーズ名:

Materials science forum

シリーズ巻号:

556-557

発行年:

2007

開始ページ:

509

終了ページ:

512

総ページ数:

4

出版情報:

Stafa-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878494422 [0878494421]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00046610
シリーズID:	PA00000012
会議名:	European Conference on Silicon Carbide and Related Materials
回次:	6th
会議開催地:	Newcastle upon Tyne, UK
会議開催年:	2006.09.00

類似資料:

1 国際会議録 Ellipsometric and XPS Studies of 4H-SiC/SiO2 Interfaces, and Sacrificial Oxide Stripped 4H-SiC Surfaces Guy, O.J., Chen, L., Pope, G., Teng, K.S., Maffeis, T., Wilks, S.P., Mawby, P.A., Jenkins, T., Brieva, A., Hayton, D.J. Trans Tech Publications	7 国際会議録 The Formation of Low Resistance Ohmic Contacts to 4H-SiC, Circumventing the Need for Post Annealing, Studied by Specific Contact Resistance Measurements and … Guy, O.J., Pope, G., Blackwood, I., Teng, K.S., Lee, W.Y., Wilks, S.P., Mawby, P.A. Trans Tech Publications
2 国際会議録 Investigation of Graphene Growth on 4H-SiC A. Castaing, O.J. Guy, M. Lodzinski, S.P. Wilks Trans Tech Publications	8 国際会議録 A Study of the Shallow Electron Traps at the 4H-SiC/SiO2 Interface Olafsson, H.O., Sveinbjornsson, E.O., Rudenko, T.E., Kilchytska, V.I., Tyagulski, I.P., Osiyuk, I.N. Trans Tech Publications
3 国際会議録 Ellipsometric Study of Thermal Silicon Oxide and Sacrificial Silicon Oxide on 4H-SiC Chen, L., Guy, O.J., Pope, G., Teng, K.S., Maffeis, T., Wilks, S.P., Mawby, P.A., Jenkins, T., Brieva, A., Hayton, D.J. Trans Tech Publications	9 国際会議録 Optimizing the Thermally Oxidized 4H-SiC MOS Interface for P-Channel Devices M. Das, S.K. Haney, C. Jonas, Q.C. Zhang, S.H. Ryu Trans Tech Publications
4 国際会議録 Metal Contacts to Boron-Doped Diamond M. Lodzinski, O.J. Guy, A. Castaing, S. Batcup, S.P. Wilks Trans Tech Publications	10 国際会議録 Characterisation of HfO₂/Si/SiC MOS Capacitors P.M. Gammon, A. Pérez-Tomás, M.R. Jennings, O.J. Guy, N. Rimmer Trans Tech Publications
5 国際会議録 Investigation of Si/4H-SiC Hetero-Junction Growth and Electrical Properties O.J. Guy, A. Pérez-Tomás, M.R. Jennings, M. Lodzinski, A. Castaing Trans Tech Publications	11 国際会議録 Interface Properties of 4H-SiC/SiO2 with MOS Capacitors and FETs Annealed in O2, N2O, NO and CO2 Wang, W., Banerjee, S., Chow, T.P., Gutmann, R.J., Issacs-Smith, T., Williams, J., Jones, K.A., Lelis, A., Tipton, W., … Trans Tech Publications
6 国際会議録 Silicon-on-SiC, a Novel Semiconductor Structure for Power Devices M.R. Jennings, A. Pérez-Tomás, O.J. Guy, M. Lodzinski, P.M. Gammon Trans Tech Publications	12 国際会議録 Inversion-Channel MOS Devices for Characterization of 4H-SiC/SiO₂ Interfaces A.I. Mikhaylov, A.V. Afanasyev, V.V. Luchinin, S.A. Reshanov, A. Schöner Trans Tech Publications

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