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EPR, ESE and Pulsed ENDOR Study of Nitrogen Related Centers in 4H-SiC Wafers Grown by Different Technologies

著者名:
E.N. Kalabukhova
S.N. Lukin
D.V. Savchenko
W.C. Mitchel
S. Greulich-Weber
U. Gerstmann
A. Poeppl
J. Hoentsch
E. Rauls
Y. Rozentzveig
E.N. Mokhov
M. Syvajarvi
R. Yakimova
さらに 8 件
掲載資料名:
Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006
シリーズ名:
Materials science forum
シリーズ巻号:
556-557
発行年:
2007
開始ページ:
355
終了ページ:
358
総ページ数:
4
出版情報:
Stafa-Zuerich: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878494422 [0878494421]
言語:
英語
請求記号:
M23650
資料種別:
国際会議録

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