Carrier Lifetime Analysis by Microwave Photoconductive Decay (μ-PCD) for 4H SiC Epitaxial Wafers
- 著者名:
- 掲載資料名:
- Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006
- シリーズ名:
- Materials science forum
- シリーズ巻号:
- 556-557
- 発行年:
- 2007
- 開始ページ:
- 323
- 終了ページ:
- 326
- 総ページ数:
- 4
- 出版情報:
- Stafa-Zuerich: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878494422 [0878494421]
- 言語:
- 英語
- 請求記号:
- M23650
- 資料種別:
- 国際会議録
類似資料:
Trans Tech Publications |
7
国際会議録
4H-SiC Epitaxy with Very Smooth Surface and Low Basal Plane Dislocation on 4 Degree Off-Axis Wafer
Trans Tech Publications |
Trans Tech Publications |
8
国際会議録
Correlation between Carrier Recombination Lifetime and Forward Voltage Drop in 4H-SiC PiN Diodes
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |