Dislocation in 4H n+ SiC Substrates and their Relationship with Epilayer Defects

Dislocation in 4H n+ SiC Substrates and their Relationship with Epilayer Defects

著者名:

P. Wu

掲載資料名:

Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006

シリーズ名:

Materials science forum

シリーズ巻号:

556-557

発行年:

2007

開始ページ:

247

終了ページ:

250

総ページ数:

4

出版情報:

Stafa-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878494422 [0878494421]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00046610
シリーズID:	PA00000012
会議名:	European Conference on Silicon Carbide and Related Materials
回次:	6th
会議開催地:	Newcastle upon Tyne, UK
会議開催年:	2006.09.00

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2 国際会議録 Characterization of SiC Substrates Using X-Ray Rocking Curve Mapping Yoganathan, M., Emorhokpor, E., Kerr, T., Gupta, A., Tanner, C.D., Zwieback, I. Trans Tech Publications	8 国際会議録 Growth of Large Diameter Semi-Insulating 6H-SiC Crystals by Physical Vapor Transport Yoganathan, M., Gupta, A., Semenas, E., Emorhokpor, E., Martin, C., Kerr, T., Zwieback, I., Souzis, A.E., Anderson, … Materials Research Society
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