Increased Growth Rates of 3C-SiC on Si (100) Substrates via HCl Growth Additive

Increased Growth Rates of 3C-SiC on Si (100) Substrates via HCl Growth Additive

著者名:

掲載資料名:

Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006

シリーズ名:

Materials science forum

シリーズ巻号:

556-557

発行年:

2007

開始ページ:

191

終了ページ:

194

総ページ数:

4

出版情報:

Stafa-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878494422 [0878494421]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00046610
シリーズID:	PA00000012
会議名:	European Conference on Silicon Carbide and Related Materials
回次:	6th
会議開催地:	Newcastle upon Tyne, UK
会議開催年:	2006.09.00

類似資料:

1 国際会議録 Development of a High-Growth Rate 3C-SiC on Si CVD Process M. Reyes, Y. Shishkin, S. Harvey, S. E. Saddow Materials Research Society	7 国際会議録 Reduced Micropipe Density in Boule-Derived 6H-SiC Substrates via H Etching of Seed Crystals Saddow, S.E., Elkington, T., Smith, M.C.D. Trans Tech Publications
2 国際会議録 Growth of 3C-SiC on Si Molds for MEWS Applications Reyes, M., Waits, M., Harvey, S., Shishkin, Y., Geil, B.R., Wolan, J.T., Saddow, S.E. Trans Tech Publications	8 国際会議録 Raman Spectra of a 4H-SiC Epitaxial Layer on Porous and Non-Porous 4H-SiC Substrates M.J. Clouter, Y. Ke, R.P. Devaty, W.J. Choyke, Y. Shishkin, S.E. Saddow Trans Tech Publications
3 国際会議録 Increased Growth Rate in a SiC CVD Reactor Using HCI as a Growth Additive Myers, R., Kordina, O., Shishkin, Z., Rao, S., Everly, R., Saddow, S. E. Trans Tech Publications	9 国際会議録 Analysis of SiC CVD Growth in a Horizontal Hot-Wall Reactor by Experiment and 3D Modelling Y. Shishkin, R.L. Myers-Ward, S.E. Saddow, A. Galyukov, A. Vorob'ev, D. Brovin, D. Bazarevskiy, R. Talalaev, Y.N. … Trans Tech Publications
4 国際会議録 High Epitaxial Growth Rate of 4H-SiC Using Horizontal Hot-Wall CVD Myers, R.L., Shishkin, Y., Kordina, O., Haselbarth, I., Saddow, S.E. Trans Tech Publications	10 国際会議録 Comparison of 3C-SiC Films Grown By CVD on Si(111) and Si(211) Substrates Wolan, J.T., Grayson, B.A., Graves, M., Bledsoe, M., Kirchner, K., Saddow, S.E. Materials Research Society
5 国際会議録 CVD Epitaxial Growth of 4H-SiC on Porous SiC Substrates Shishkin, Y., Ke, Y., Yan, F., Devaty, R.P., Choyke, W.J., Saddow, S.E. Trans Tech Publications	11 国際会議録 Growth of Single Crystal 3C-SiC(111) on a Poly-Si Seed Layer C. Locke, C.L. Frewin, J. Wang, S.E. Saddow Trans Tech Publications
6 国際会議録 Reduced Micropipe Density in Boule-Derived 6H-SiC Substrates via H Etching of Seed Crystals Saddow, S.E., Elkington, T., Smith, M.C.D. Trans Tech Publications	12 国際会議録 Development of 3C-SiC SOI Structures using Si on Polycrystalline SiC Wafer Bonded Substrates Myers, R.L., Saddow, S.E., Rao, S., Hobart, K.D., Fatemi, M., Kub, F.J. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12