Growth and Study of Thick 3C-SiC Epitaxial Layers Produced by Epitaxy on 6H-SiC Substrates

Growth and Study of Thick 3C-SiC Epitaxial Layers Produced by Epitaxy on 6H-SiC Substrates

著者名:

A.A. Lebedev

掲載資料名:

Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006

シリーズ名:

Materials science forum

シリーズ巻号:

556-557

発行年:

2007

開始ページ:

175

終了ページ:

178

総ページ数:

4

出版情報:

Stafa-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878494422 [0878494421]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00046610
シリーズID:	PA00000012
会議名:	European Conference on Silicon Carbide and Related Materials
回次:	6th
会議開催地:	Newcastle upon Tyne, UK
会議開催年:	2006.09.00

類似資料:

1 国際会議録 P-Type 3C-SiC Grown by Sublimation Epitaxy on 6H-SiC Substrates S.P. Lebedev, A.A. Lebedev, P.L. Abramov, E.V. Bogdanova, D.K. Nel'son Trans Tech Publications	7 国際会議録 Investigation of p-3C-SiC/n+-6H-SiC Heterojunctions with Low Doped p-3C-SiC Region Lebedev, A.A., Strel'chuk, A.M., Savkina, N.S., Bogdanova, E.V., Tregubova, A.S., Kuznetsov, A.N., Davydov, D.V. Trans Tech Publications
2 国際会議録 On Application of Sublimation Epitaxy to Growth of Bulk 3C-SiC Crystals A.A. Lebedev, P.L. Abramov, A.S. Zubrilov, E.V. Bogdanova, S.P. Lebedev Trans Tech Publications	8 国際会議録 Porous SiC substrate materials for high-quality epitaxial and bulk growth Mynbaeva, M., Savkina, N., Zubrilov, A., Seredova, N., Scheglov, M., Titkov, A., Tregubova, A., Lebedev, A., … MRS-Materials Research Society
3 国際会議録 Low Temperature near Band Gap Photoluminescence of 3C-SiC/15R-SiC and 3C-SiC/6H-SiC Heterostructures A.A. Lebedev, P.L. Abramov, E.V. Bogdanova, S.Y. Davydov, S.P. Lebedev Trans Tech Publications	9 国際会議録 Microwave p-i-n Diodes Fabricated on 4H-SiC Material Grown by Sublimation Epitaxy in Vacuum N. Camara, L.P. Romanov, A.V. Kirillov, M.S. Boltovets, A.A. Lebedev, V.V. Zelenin, M. Kayambaki, K. Zekentes Trans Tech Publications
4 国際会議録 Investigation of 3C-SiC Epitaxial Layers Grown by Sublimation Epitaxy Davydov, D. V., Lebedev, A. A., Tregubova, A. S., Kozlovski, V. V., Kuznetsov, A. N., Bogdanova, E. V. Trans Tech Publications	10 国際会議録 Investigation of the Metal-Insulator Transition in n-3C-SiC Epitaxial Films A.A. Lebedev, P.L. Abramov, N.V. Agrinskaya, V.I. Kozub, A.N. Kuznetsov Trans Tech Publications
5 国際会議録 Structural and Optical Studies of Low-Doped n-6H SiC Layers Grown by Vacuum Sublimation Savkina, N. S., Lebedev, A. A., Tregubova, A. S., Scheglov, M. P. Trans Tech Publications	11 国際会議録 Growth of SiC and GaN on Porous Buffer Layers Mynbaeva, M., Savkina, N. S., Tregubova, A. S., Scheglov, M. P., Lebedev, A. A., Zubrilov, A., Titkov, A., Kryganovski, … Trans Tech Publications
6 国際会議録 Optical Characterization of Compensating Defects in Cubic SiC P. Ščajev, K. Jarašiūnas, P.L. Abramov, S.P. Lebedev, A.A. Lebedev Trans Tech Publications	12 国際会議録 Conductivity Compensation in CVD-Grown n-4H-SiC under Irradiation with 0.9 MeV Electrons V.V. Kozlovski, A.A. Lebedev, E.V. Bogdanova, N.V. Seredova Trans Tech Publications

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