In Situ Measurement of Nitrogen during Growth of 4H-SiC by CVD

In Situ Measurement of Nitrogen during Growth of 4H-SiC by CVD

著者名:

B.L. Van Mil

掲載資料名:

Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006

シリーズ名:

Materials science forum

シリーズ巻号:

556-557

発行年:

2007

開始ページ:

125

終了ページ:

128

総ページ数:

4

出版情報:

Stafa-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878494422 [0878494421]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00046610
シリーズID:	PA00000012
会議名:	European Conference on Silicon Carbide and Related Materials
回次:	6th
会議開催地:	Newcastle upon Tyne, UK
会議開催年:	2006.09.00

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2 国際会議録 Comparative Investigation between X-Ray Diffraction and Cross Polarization Mapping of 4H-SiC Wafers Off-Cut 4° Towards (11-20) D.K. Gaskill, M.A. Mastro, K.K. Lew, B.L. Van Mil, R.L. Myers-Ward, R.T. Holm, C.R. Eddy Jr Trans Tech Publications	8 国際会議録 Turning of Basal Plane Dislocations during Epitaxial Growth on 4° Off-Axis 4H-SiC R.L. Myers-Ward, B.L. VanMil, R.E. Stahlbush, S.L. Katz, J.M. McCrate Trans Tech Publications
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4 国際会議録 Temperature Dependence of the Carrier Lifetime in 4H-SiC Epilayers P.B. Klein, R.L. Myers-Ward, K.K. Lew, B.L. VanMil, C.R. Eddy Jr. Trans Tech Publications	10 国際会議録 Effects of Nitrogen Doping on Basal Plane Dislocation Reduction in 8° Off-Cut 4H-SiC Epilayers V.D. Wheeler, B.L. VanMil, R.L. Myers-Ward, S. Chung, Y.N. Picard Trans Tech Publications
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