Homoepitaxial Growth of Vanadium-Doped 4H-SiC Using Bis-Trimethylsilylmethane and Verrocene Precursors

Homoepitaxial Growth of Vanadium-Doped 4H-SiC Using Bis-Trimethylsilylmethane and Verrocene Precursors

著者名:

H.K. Song

掲載資料名:

Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006

シリーズ名:

Materials science forum

シリーズ巻号:

556-557

発行年:

2007

開始ページ:

113

終了ページ:

116

総ページ数:

4

出版情報:

Stafa-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878494422 [0878494421]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00046610
シリーズID:	PA00000012
会議名:	European Conference on Silicon Carbide and Related Materials
回次:	6th
会議開催地:	Newcastle upon Tyne, UK
会議開催年:	2006.09.00

類似資料:

1 国際会議録 Homoepitaxial Growth of Iron-Doped 4H-SiC by Bis-Trimethylsilylmethane and Ferrocene Precursors for Semi-Insulating Si Song, H. K., Jeong, J. K., Kim, S. G., Urn, M. Y., Na, H. J., Jung, S. Y., Seo, H. S., Yim, J. H., Lee, J. B., Kim, H. … Electrochemical Society	7 国際会議録 Homoepitaxial Growth of 4H-SiC on Porous Substrate Using Bis-Trimethylsilylmethane Precursor Jeong, J. K., Um, M. Y., Na, H. J., Kim, B. S., Song, I. B., Kim, H. J. Trans Tech Publications
2 国際会議録 Homoepitaxial Growth of Al-Doped 4H-SiC Using Bis-Trimethylsilylmethane Precursor Song, H. K., Um, M. Y., Na, H. J., Kim, D. H., Song, I. B., Jung, S. Y., Jeong, J. K., Lee, J. B., Kim, H. J. Trans Tech Publications	8 国際会議録 4H-SiC Planar MESFETs on High-Purity Semi-Insulating Substrates J.H. Yim, H.K. Song, J.H. Moon, H.S. Seo, J.H. Lee, H.J. Na, J.B. Lee, H.J. Kim Trans Tech Publications
3 国際会議録 Homoepitaxial Growth of Iron-Doped 4H-SiC Using BTMSM and t-Butylferrocene Precursors for Semi-Insulating Property Song, H.K., Moon, J.H., Yim, J.H., Kim, H.J. Trans Tech Publications	9 国際会議録 Electrical Properties of the La2O3/4H-SiC Interface Prepared by Atomic Layer Deposition Using La(iPrCp)3 and H2O Moon, J.H., Eom, D.I., No, S.Y., Song, H.K., Yim, J.H., Na, H.J., Lee, J.B., Kim, H.J. Trans Tech Publications
4 国際会議録 Schottky Barrier Diode Fabricated by MOCVD-Grown Epilayer Using Bis- Trimethylsilylmethane Precursor H.K. Song, J.H. Lee, M.S. Oh, J.H. Moon, H.S. Seo Trans Tech Publications	10 国際会議録 Improved 4H-SiC MOS Interface Produced by Oxidized-SiN Gate Oxide J.H. Moon, J.H. Yim, H.S. Seo, C.H. Kim, D.H. Lee Trans Tech Publications
5 国際会議録 Homoepitaxial Growth of 4H-SiC on Porous Substrate Using Bis-Trimethylsilylmethane Precursor Jeong, J.K., Um, M.Y., Na, H.J., Kim, B.S., Song, I.B., Kim, H.J. Trans Tech Publications	11 国際会議録 Electrical Properties of Metal-Oxide-Semiconductor (MOS) Structures on 4H-SiC(0001) Formed by Oxidizing Pre-Deposited SixNy J.H. Moon, D.H. Kim, H.K. Song, J.H. Yim, W. Bahng, N.K. Kim, K.S. Seo, H.J. Kim Trans Tech Publications
6 国際会議録 Homoepitaxial Growth of 4H-SiC by Hot-Wall CVD Using BTMSM H.S. Seo, H.G. Song, J.H. Moon, J.H. Yim, M.S. Oh Trans Tech Publications	12 国際会議録 4H-SiC Planar MESFETs With fmax of 40 GHz Without Trapping Effect Na, H.J., Jung, S.Y., Yim, J.H., Urn, M.Y., Song, H.K., Kim, H.J. Electrochemical Society

1

2

3

4

5

6

7

8

9

10

11

12