Comparison of Chlorine Based In Situ Etching of 4H SiC Substrates

Comparison of Chlorine Based In Situ Etching of 4H SiC Substrates

著者名:

M.F. MacMillan

掲載資料名:

Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006

シリーズ名:

Materials science forum

シリーズ巻号:

556-557

発行年:

2007

開始ページ:

69

終了ページ:

72

総ページ数:

4

出版情報:

Stafa-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878494422 [0878494421]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00046610
シリーズID:	PA00000012
会議名:	European Conference on Silicon Carbide and Related Materials
回次:	6th
会議開催地:	Newcastle upon Tyne, UK
会議開催年:	2006.09.00

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1 国際会議録 Wafer Level Recombination Carrier Lifetime Measurements of 4H-SiC PiN Epitaxial Wafers G.Y. Chung, M.J. Loboda, M.F. MacMillan, J.W. Wan Trans Tech Publications	7 国際会議録 Progress in Growth of Thick Epitaxial Layers on 4 Degree Off-Axis 4H SiC Substrates J. Zhang, G.Y. Chung, E.K. Sanchez, M.J. Loboda, S.G. Sundaresan Trans Tech Publications
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