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Analysis of SiC CVD Growth in a Horizontal Hot-Wall Reactor by Experiment and 3D Modelling

著者名:
Y. Shishkin
R.L. Myers-Ward
S.E. Saddow
A. Galyukov
A. Vorob'ev
D. Brovin
D. Bazarevskiy
R. Talalaev
Y.N. Makarov
さらに 4 件
掲載資料名:
Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006
シリーズ名:
Materials science forum
シリーズ巻号:
556-557
発行年:
2007
巻:
556-557
開始ページ:
61
終了ページ:
64
総ページ数:
4
出版情報:
Stafa-Zuerich: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878494422 [0878494421]
言語:
英語
請求記号:
M23650
資料種別:
国際会議録

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