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An Inserted Epitaxial Layer for SiC Single Crystal Growth by the Physical Vapor Transport Method

著者名:
J.D. Seo
J.H. An
J.G. Kim
J.K. Kim
M.O. Kyun
W.J. Lee
I.S. Kim
B.C. Shin
K.R. Ku
さらに 4 件
掲載資料名:
Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006
シリーズ名:
Materials science forum
シリーズ巻号:
556-557
発行年:
2007
巻:
556-557
開始ページ:
9
終了ページ:
12
総ページ数:
4
出版情報:
Stafa-Zuerich: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878494422 [0878494421]
言語:
英語
請求記号:
M23650
資料種別:
国際会議録

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