Blank Cover Image

Gallium nitride nanowires: polar surface controlled growth, ohmic contact patterning by focused ion-beam-induced direct Pt deposition and disorder effects, variable range hopping, and resonant electromechanical properties [6370-53]

著者名:
Nam, C. -Y.
Tham, D.
Jaroenapibal, P.
Kim, J.
Luzzi, D. E. ( Univ. of Pennsylvania (USA) )
Evoy, S. ( Univ. of Alberta (Canada) )
Fischer, J. E. ( Univ. of Pennsylvania (USA) )
さらに 2 件
掲載資料名:
Nanomaterial synthesis and integration for sensors, electronics, photonics, and electro-optics : 1-4 October, 2006, Boston, Massachusetts, USA
シリーズ名:
Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号:
6370
発行年:
2006
開始ページ:
63701F
出版情報:
Bellingham, Wash.: SPIE - The International Society of Optical Engineering
ISSN:
0277786X
ISBN:
9780819464682 [0819464686]
言語:
英語
請求記号:
P63600/6370
資料種別:
国際会議録

類似資料:

1 国際会議録 Effect of the Polar Surface on GaN Nanostructure Morphology and Growth Orientation

Nam, C. Y., Tham, D., Fischer, J. E.

Materials Research Society
7 国際会議録 Characterization of Pt Nanocontacts to ZnO Nanowires using Focused-Ion-Beam Deposition

Pei-Hsin Chang, Kun-Tong Tsai

Materials Research Society
2 国際会議録 A computer modelling study of hopping transport and variable range hopping in disordered solids

Marshall J M

Springer
8 国際会議録 Long-range hopping mobility platform

Fischer, G.J., Spletzer, B.L.

SPIE-The International Society for Optical Engineering
3 国際会議録 Al-Si-Ti Ohmic Contacts on N-Type Gallium Nitride

N. Thierry-Jebali, O. Ménard, A. Yvon, E. Collard, M. Zhe

Trans Tech Publications
9 国際会議録 Ohmic Contact Formation on Silicon-Doped Gallium Nitride Epilayers by Low Temperature Annealing

Prakash, S., Tan, L. S., Ng, K. M., Raman, A., Chua, S. J., Wee, A. T. S., Lim, S. L.

Trans Tech Publications
4 国際会議録 An investigation of refractory metal ohmic contacts to Gallium Nitride

Smith, M.A., Kapoor, V.J., Hickman, R., II, Van Hove, J.

Electrochemical Society
10 国際会議録 Ohmic contacts on binary and ternary nitrides

Ren, F., Pearton, S.J., Donovan, S., Abernathy, C.R., Cole, M.W.

Electrochemical Society
5 国際会議録 The microstructure and electrical properties of directly deposited TiN ohmic contacts to gallium nitride

Ruterana, P., Nouet, G., Kehagias, Th., Komninou, Ph., Karakostas, Th., Poisson, M. A. di Forte, Huet, F.

MRS-Materials Research Society
11 国際会議録 Nanocrystalline Gallium Nitride From Gallium Azide Precursors

Manz, A. H., Frank, A. C., Sussek, H., Stowasser, F., Fischer, R. A.

MRS - Materials Research Society
6 国際会議録 Focused-Ion-Beam-Deposited Pt Contacts on ZnO Nanowires

J. He, P. Chang, C. Chen, K. Tsai

Electrochemical Society
12 国際会議録 Au-Ge-Ni-Ti OHMIC CONTACTS ON GALLIUM ARSENIDE

Alexander, K. B., Stobbs, W. M.

Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12