Simulation of critical dimension and profile metrology based on scatterometry method [6349-57]

Simulation of critical dimension and profile metrology based on scatterometry method [6349-57]

著者名:

Chalykh, R.
Pundaleva, I.
Kim, S.
Cho, H.-K.
Moon, J.-T. ( Samsung Electronics Co. (South Korea) )

掲載資料名:

Photomask Technology 2006

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

6349

発行年:

2006

パート:

1

開始ページ:

63491K

出版情報:

Bellingham, Wash.: SPIE - The International Society of Optical Engineering

ISSN:

0277786X

ISBN:

9780819464446 [0819464449]

言語:

英語

請求記号:

P63600/6349

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00016353
シリーズID:	PA00000029
会議名:	SPIE Photomask Technology : Annual BACUS Symposium on Photomask Technology
回次:	2006 : 26th
会議開催地:	Monterey, CA, USA
会議開催年:	2006.09.19-2006.09.22

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